Field-effect transistor and method for producing a field-effect transistor

摘要

A semiconductor body (10) comprises a field-effect transistor (11). The field-effect transistor (11) comprises a drain region (12) of a first conduction type, a source region (13) of the first conduction type, a drift region (16) and a channel region (14) of a second conduction type which is opposite to the first conduction type. The drift region (16) comprises at least two stripes (15, 32) of the first conduction type which extend from the drain region (12) in a direction towards the source region (13). The channel region (14) is arranged between the drift region (16) and the source region (13).

主权项

1. A semiconductor body, comprising:
a first field-effect transistor which comprises:
a drain region of a first conduction type;a source region of the first conduction type;a drift region comprising at least two stripes of the first conduction type which extend from the drain region in a direction towards the source region;a channel region of a second conduction type which is opposite to the first conduction type, the channel region being arranged between the drift region and the source region;a further source region of the first conduction type;a further drift region comprising at least two further stripes of the first conduction type which extend from the drain region in a direction towards the further source region; anda further channel region of the second conduction type, the further channel region being arranged between the further drift region and the further source region,wherein the further stripes are separated from the stripes by a distance that is located between the stripes and the further stripes; a first well of the second conduction type in which the first field-effect transistor is arranged; and a second well of the first conduction type in which a second field-effect transistor is arranged, wherein the drain region, the source region, the channel region and the at least two stripes are arranged at a first main area of the semiconductor body, and wherein an extension of the at least two stripes and of the at least two further stripes has a thickness perpendicular to a surface of the first main area greater than a thickness of an extension of the drain region perpendicular to the surface of the first main area.