Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance

摘要

An embodiment of a vertical power device includes a III-nitride substrate, a drift region coupled to the III-nitride substrate and comprising a III-nitride material of a first conductivity type, and a channel region coupled to the drift region and comprising a III-nitride material of the first conductivity type. The vertical power device also includes a source region coupled to the channel region and comprising a III-nitride material of the first conductivity type, and a gate region coupled to the channel region. The gate region includes a III-nitride material of a second conductivity type. The vertical power device further includes a source-coupled region coupled to the drift region and electrically connected with the source region. The source-coupled region includes a III-nitride material of the second conductivity type.

主权项

1. A vertical power device comprising:
a III-nitride substrate; a III-nitride drift region coupled to the III-nitride substrate and having a first conductivity type; a III-nitride channel region coupled to the III-nitride drift region and having the first conductivity type; a III-nitride source region coupled to the III-nitride channel region and having the first conductivity type; a III-nitride gate region coupled to the III-nitride channel region, wherein the III-nitride gate region has a second conductivity type; and a source-coupled region coupled to the III-nitride drift region and electrically connected with the III-nitride source region, wherein the source-coupled region comprises a III-nitride material of the second conductivity type.