Solid state light emitting devices based on crystallographically relaxed structures

摘要

The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.3 μm and wherein the mask layer may comprise a first mask layer portion and a second mask layer portion, having the same surface area and comprising a plurality of openings wherein the first mask layer portion exhibits a first ratio between an exposed area of the growth surface and an unexposed area of the growth surface, and wherein the second mask layer portion exhibits a second ratio between an exposed area of the growth surface and an unexposed area of said growth surface, the second ratio being different from the first ratio; growing a base structure on the growth surface in each of the openings of the mask layer; and growing at least one light-generating quantum well layer on the surface of each of the base structures.

主权项

1. A method for manufacturing a solid state light emitting device having a plurality of light sources, the method comprising the steps of:
providing a substrate having a growth surface; providing a mask layer on said growth surface, said mask layer having a plurality of openings through which said growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.3 μm and wherein said mask layer comprises a first mask layer portion and a second mask layer portion, each comprising a plurality of openings exposing said growth surface, wherein said first mask layer portion exhibits a first ratio between an exposed area of said growth surface and an unexposed area of said growth surface, and wherein said second mask layer portion exhibits a second ratio between an exposed area of said growth surface and an unexposed area of said growth surface, said second ratio being different from said first ratio; growing a base structure on said growth surface in each of said openings of said mask layer; and growing at least one light-generating quantum well layer on the surface of each of said base structures.