Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an insulation layer including an opening on a substrate on which a plurality of lower conductive structures are formed; forming a barrier layer on a sidewall and a bottom of the opening of the insulation layer, wherein the barrier layer includes boron at a concentration that decreases from a first surface contacting the sidewall and the bottom of the opening to a second surface opposite to the first surface; forming an interconnection on the barrier layer in the opening, wherein the interconnection is electrically connected to one of the plurality of lower conductive structures; and forming an upper conductive structure on the insulation layer, wherein the upper conductive structure is electrically connected to the interconnection to electrically connect the upper conductive structure to the one of the plurality of lower conductive structures through the interconnection.