Method for manufacturing variable resistance element

摘要

Provided is a method for manufacturing a variable resistance element, the method including: forming a first electrode material layer above a substrate; forming a first tantalum oxide material layer; forming a second tantalum oxide material layer; forming a second electrode material layer; and annealing at least the first tantalum oxide material layer after forming the first tantalum oxide material layer and before forming the second electrode material layer, wherein an oxygen content percentage of one of the first tantalum oxide material layer and the second tantalum oxide material layer is higher than an oxygen content percentage of the other.

主权项

1. A method for manufacturing a variable resistance element, the method comprising:
forming a first electrode material layer above a substrate; forming a first tantalum oxide material layer on the first electrode material layer; forming a second tantalum oxide material layer on the first tantalum oxide material layer; forming a second electrode material layer on the second tantalum oxide material layer; and annealing at least the first tantalum oxide material layer to inhibit diffusion of oxygen atoms in the first tantalum oxide material layer and the second tantalum oxide material layer, after forming the first tantalum oxide material layer and before forming the second electrode material layer, wherein an oxygen content percentage of one of the first tantalum oxide material layer and the second tantalum oxide material layer is higher than an oxygen content percentage of the other, and in the annealing, annealing is performed at a temperature greater than or equal to 300° C. and less than or equal to 450° C. in a state in which no oxygen is supplied from outside.