Field-effect transistor (FET) with source-drain contact over gate spacer

摘要

A field-effect transistor (FET) and methods for fabricating such. The FET includes a substrate having a crystalline orientation, a source region in the substrate, and a drain region in the substrate. Gate spacers are positioned over the source region and the drain region. The gate spacers include a gate spacer height. A source contact physically and electrically contacts the source region and extends beyond the gate spacer height. A drain contact physically and electrically contacts the drain region and extends beyond the gate spacer height. The source and drain contacts have the same crystalline orientation as the substrate.

主权项

1. A method for constructing a field-effect transistor (FET), the method comprising:
forming a source region and a drain region in a substrate; forming gate spacers over the source region and the drain region, the gate spacers including a gate spacer height; epitaxially growing a source contact and a drain contact, the source contact contacting the source region and extending beyond the gate spacer height, the drain contact contacting the drain region and extending beyond the gate spacer height; forming an electrically conductive gate above and intermediate to the source region and the drain region; and wherein the gate is formed after epitaxially growing the source contact and the drain contact.