ReRAM cells including Ta_XSi_YN embedded resistors

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a resistive switching layer connected in series with this resistor. The resistor is configured to prevent over-programming of the cell by limiting electrical currents through the resistive switching layer. Unlike the resistive switching layer, which changes its resistance in order to store data, the embedded resistor maintains a substantially constant resistance during operation of the cell. The embedded resistor is formed from tantalum nitride and silicon nitride. The atomic ratio of tantalum and silicon may be specifically selected to yield resistors with desired densities and resistivities as well as ability to remain amorphous when subjected to various annealing conditions. The embedded resistor may also function as a diffusion barrier layer and prevent migration of components between one of the electrodes and the resistive switching layer.

主权项

1. A method comprising:
forming a first conductive layer on a substrate,
wherein the first conductive layer is operable as an electrode; forming a resistive switching layer over the first conductive layer,
wherein the resistive switching layer is operable to switch between at least two different resistive state; forming a stack of one or more tantalum nitride layers and one or more silicon nitride layers over the resistive switching layer,
wherein the stack is deposited using an atomic layer deposition technique; and annealing the stack, thereby forming an embedded resistor from the stack.