主权项 |
1. A photovoltaic (PV) cell including a p-type semiconductor, an n-type semiconductor, and a contact disposed adjacent to at least one of the p-type semiconductor and the n-type semiconductor, the PV cell comprising:
a superlattice material having an effective energy gap that is a graded energy gap, the superlattice material comprising:
a first quantum well sublayer having a first material with a first band gap and that enhances charge carrier population;a first crystalline silicon sublayer, in direct contact with the first quantum well sublayer, having a second material with a second band gap and high charge-carrier mobility to transport charges to electrodes effectively, the second band gap being greater than the first band gap;a second quantum well sublayer, in direct contact with the first crystalline silicon sublayer, having the first material with the first band gap;a second crystalline silicon sublayer, in direct contact with the second quantum well sublayer, having the second material with the second band gap;a first quantum barrier sublayer, in direct contact with the second crystalline sublayer, having a third material with a third band gap and that increases operating voltage of the PV cell, the third band gap being greater than the first band gap and the second band gap;a third crystalline silicon sublayer, in direct contact with the first quantum barrier sublayer, having the second material with the second band gap; anda second quantum barrier sublayer, in direct contact with the third crystalline sublayer, having the third material with the third band gap. |