Semiconductor device and rectifier system

摘要

High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an additional semiconductor element, e.g., with magnetoresistors (TMBS) or with pn diodes (TJBS), and have trenches. Such high-efficiency Schottky diodes make it possible to construct rectifiers which are suitable for higher temperatures and can therefore be used in motor vehicle generators, without particular cooling measures such as heat sinks being required.

主权项

1. A high-efficiency Schottky diode device configured as a rectifier for a three-phase generator in a motor vehicle, comprising:
a first Schottky diode; and a second semiconductor element monolithically integrated with the first Schottky diode as parts of a semiconductor chip;
wherein the semiconductor chip has at least one trench structure,wherein the second semiconductor element includes one of an MOS-structure and a p-n diode, and wherein a conducting-state voltage is set by the metal for the Schottky barrier so that the conducting-state voltage is in the range of 0.5 V to 0.6 V, wherein a barrier height of approximately 0.65 eV to 0.75 eV is provided, and wherein a temperature range is above about 165° Celsius.