Electronic device including a trench and a conductive structure therein

摘要

An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence.

主权项

1. An electronic device comprising a transistor structure, comprising:
a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench, a second trench, and a third trench that extend from the primary surface towards the substrate, wherein the third trench is disposed between the first and second trenches, and wherein the first, second, and third trenches are disposed within an active region; a first conductive structure within the first trench; a first gate electrode within the first trench and electrically insulated from the first conductive structure; a second conductive structure within the second trench; a second gate electroge within the second trench and electrically insulated from the second conductive structure; a third conductive structure within the third trench, wherein no gate electrode is disposed above the third conductive structure; a source region within the patterned semiconductor layer and disposed between the first and second trenches; and a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface.