| 发明名称 |
Method for removing oxide |
| 摘要 |
A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas, wherein the volumetric flow rate of NF3 is greater than that of NH3. |
| 申请公布号 |
US8969209(B2) |
申请公布日期 |
2015.03.03 |
| 申请号 |
US201313966276 |
申请日期 |
2013.08.13 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Chen Yen-Chu;Tsai Teng-Chun;Huang Chien-Chung;Liu Keng-Jen |
| 分类号 |
H01L21/302;C23F1/00;H01L21/3065;H01L21/02 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for removing oxide, comprising:
providing a substrate, wherein the substrate has an exposed portion and an oxide layer has been formed on the exposed portion; performing a removing oxide process to the substrate using nitrogen trifluoride (NF3) and ammonia (NH3) as a reactant gas; and sequentially performing a second annealing process and a first annealing process to the substrate after the removing oxide process is performed, wherein the second annealing process is an in-situ annealing process to remove the oxide layer and the first annealing process is performed to re-crystallize the substrate. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
