Method for epitaxial layer overgrowth

摘要

Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.

主权项

1. A method of workpiece processing comprising:
selectively implanting ions into a plurality of implanted regions in a workpiece, wherein said ions comprise oxygen, silicon, germanium, carbon, or nitrogen; annealing said workpiece such that said ions are incorporated into said implanted regions; and forming a compound semiconductor on said workpiece, wherein said compound semiconductor grows over said implanted regions.