Internal voltage generating circuit for preventing voltage drop of internal voltage

摘要

An internal voltage generating circuit is utilized to perform a TDBI (Test During Burn-in) operation for a semiconductor device. The internal voltage generating circuit produces an internal voltage at a high voltage level, as an internal voltage, in not only a standby section but also in an active section in response to a test operation signal activated in a test operation. Accordingly, dropping of the internal voltage in the standby section of the test operation and failure due to open or short circuiting are prevented. As a result, reliability of the semiconductor chip, by preventing the generation of latch-up caused by breakdown of internal circuits, is assured.

主权项

1. A semiconductor device, comprising:
a controller that generates an active signal in response to internal control signals and a test operation signal, during a test operation of the semiconductor device; and a voltage generator that generates a high voltage level in response to the active signal, during a time period that the semiconductor device is active through a time period that the semiconductor device is in a standby mode so that a voltage drop is prevented during the standby mode time period.