Fin-last replacement metal gate FinFET

摘要

FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.

主权项

1. A field effect transistor device, comprising:
a source region; a drain region; a plurality of fins connecting the source region and the drain region, wherein the fins serve as a channel region of the device, and wherein the fins have a pitch of from about 20 nm to about 200 nm and each of the fins has a width of from about 2 nm to about 40 nm; a metal gate which at least partially surrounds each of the fins, wherein the source and the drain regions are self-aligned with the metal gate; a dielectric filler layer around the metal gate; a first set of spacers between the dielectric filler layer and the metal gate, wherein the fins are present only between the first set of spacers; and a second set of spacers between the first set of spacers and the metal gate, wherein the second set of spacers is present over the fins.