Methods for fabricating semiconductor device structures and arrays of vertical transistor devices

摘要

A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first gate insulator and a first gate conductor comprising graphene overlying the first gate insulator. The gate conductor may comprise graphene in one or more monolayers. Also disclosed are a method for fabricating the semiconductor device structure; an array of vertical transistor devices, including semiconductor devices having the structure disclosed; and a method for fabricating the array of vertical transistor devices.

主权项

1. A method for fabricating a semiconductor device structure, comprising:
forming a plurality of metal seeds upon a substrate; forming a conductor material upon each of the plurality of metal seeds to form a plurality of gate conductors; forming an insulator material upon each of the plurality of gate conductors to form a plurality of gate insulators, a first gate insulator of the plurality of gate insulators separated from a second gate insulator of the plurality of gate insulators by a first trench; and filling the first trench with a channel material to form a channel region.