发明名称 Interconnect structure for high frequency signal transmissions
摘要 A higher aspect ratio for upper level metal interconnects is described for use in higher frequency circuits. Because the skin effect reduces the effective cross-sectional area of conductors at higher frequencies, various approaches are described to reduce the effective RC delay in interconnects.
申请公布号 US8970048(B2) 申请公布日期 2015.03.03
申请号 US201113340764 申请日期 2011.12.30
申请人 Kabushiki Kaisha Toshiba 发明人 Inohara Masahiro
分类号 H01L23/535;H01L23/528;H01L23/522;H01L23/66 主分类号 H01L23/535
代理机构 Banner & Witcoff, Ltd. 代理人 Banner & Witcoff, Ltd.
主权项 1. A semiconductor device comprising: a first interconnect at a first level with a first aspect ratio, the first interconnect having a width; a second interconnect at a second level with a second aspect ratio greater than two times the first aspect ratio, where the second level is higher in the semiconductor device than the first level, the second interconnect having a width; a third interconnect at the second level separated with an insulator from the second interconnect by a distance between the second interconnect and the third interconnect, the third interconnect having a width; and one or more conductive plugs configured to electrically connect the first interconnect and the second interconnect, wherein the distance between the second interconnect and the third interconnect is larger than the width of one of the second interconnect and the width of the third interconnect.
地址 Minato-ku, Tokyo JP