Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof

摘要

An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

主权项

1. An insulating film comprising zirconium oxide,
wherein the insulating film comprises an amorphous region and a plurality of cavities dispersively located in the insulating film, and wherein each of the plurality of cavities has a size in which a length in a direction parallel to a surface of the insulating film is larger than a length in a direction perpendicular to the surface of the insulating film.