发明名称 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
摘要 Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.
申请公布号 US8970262(B2) 申请公布日期 2015.03.03
申请号 US201213978373 申请日期 2012.01.09
申请人 Infineon Technologies Austria AG 发明人 Weis Rolf;Hirler Franz;Feldtkeller Martin;Deboy Gerald;Stecher Matthias;Willmeroth Armin
分类号 H03B1/00;H03K3/00;H01L27/088;H03K17/06;H01L21/8234;H01L29/78;H01L29/423;H01L27/098;H01L29/06 主分类号 H03B1/00
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. A semiconductor device arrangement, comprising: a first transistor having a load path between load terminals and a control terminal configured to receive a drive voltage that switches on or switches off the first transistor; a plurality of second transistors, each second transistor having a load path between a first load terminal and a second load terminal and a control terminal; wherein the second transistors have their load paths connected in series and connected in series to the load path of the first transistor; wherein each but one of the second transistors has its control terminal connected to the load terminal of another one of the second transistors; wherein one of the second transistors has its control terminal connected to one of the load terminals of the first transistor; and wherein the first transistor comprises a normally-off transistor.
地址 Villach AT