Defective P-N junction for backgated fully depleted silicon on insulator MOSFET

摘要

Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.

主权项

1. A method for semiconductor fabrication, comprising:
forming a well in a semiconductor substrate, the semiconductor substrate including a semiconductor on insulator (SOI) layer present on a buried dielectric layer, the buried dielectric layer being present on a base semiconductor layer, wherein the well region is present within the base semiconductor layer; forming a pocket within the well region directly underlying the buried dielectric layer, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket; creating defects at the p-n junction such that a leakage resistance of the p-n junction is decreased.