Gate contact for a semiconductor device and methods of fabrication thereof

摘要

Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a dielectric layer on a surface of the semiconductor structure, where the dielectric layer has an opening that exposes an area of the semiconductor structure. A gate contact for the semiconductor device is formed on the exposed area of the semiconductor structure through the opening in the dielectric layer. The gate contact includes a proximal end on a portion of the exposed area of the semiconductor structure, a distal end opposite the proximal end, and sidewalls that each extend between the proximal end and the distal end of the gate contact. For each sidewall of the gate contact, an air region separates the sidewall and the distal end of the gate contact from the dielectric layer.

主权项

1. A semiconductor device comprising:
semiconductor structure; a dielectric layer on a surface of the semiconductor structure, the dielectric layer having an opening that exposes an area of the semiconductor structure to thereby provide an exposed area of the semiconductor structure; a gate contact comprising:
a proximal end on a portion of the exposed area of the semiconductor structure;a distal end opposite the proximal end; andsidewalls that each extends between the proximal end and the distal end; a field plate on a surface of the dielectric layer adjacent to the gate contact; and for each of the sidewalls of the gate contact, an air region that separates the sidewall of the gate contact from the dielectric layer; wherein the field plate has a first edge that is aligned with an edge of the distal end of the gate contact and extends laterally away from the gate contact to a second edge of the field plate, and the field plate is separated from an adjacent one of the sidewalls of the gate contact and the distal end of the gate contact by the air region that separates the adjacent one of the sidewalls of the gate contact and the distal end of the gate contact from the dielectric layer.