Light emitting device

摘要

Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.

主权项

1. A light emitting device, comprising:
a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a substrate disposed beneath the first and second electrodes,
wherein the first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged,wherein the first semiconductor layer comprises a first region vertically overlapped with the active layer and a second region not overlapped with the first region, the second region including the edge portion, at which the hole is formed,wherein the substrate comprises:
a first substrate portion contacting the first electrode; anda second substrate portion spaced apart from the first substrate portion by a spacing, the second substrate portion contacting the second electrode, and the light emitting device comprises an electrode pad disposed on the first semiconductor layer while contacting the portion of the first electrode arranged in the hole, and wherein the first substrate portion and the second substrate portion are overlapped with the light emitting structure.