Memory cells having storage elements that share material layers with steering elements and methods of forming the same

摘要

A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.

主权项

1. A memory cell comprising:
a steering element comprising a diode having an n-region and a p-region; a metal-insulator-metal (“MIM”) stack coupled in series with the steering element, wherein the MIM stack comprises a reversible resistivity-switching (“RRS”) material disposed between a top electrode and a bottom electrode, and the top electrode comprises a highly doped semiconductor material; and a conductor disposed above the MIM stack, wherein the memory cell does not include a metal layer disposed between the MIM stack and the conductor, and wherein the bottom electrode comprises the n-region or the p-region of the diode and the RRS material is disposed directly adjacent the n-region or the p-region of the diode.