| 摘要 |
The present invention improves the efficiency of a charge pump circuit. The charge pump circuit includes serially connected fundamental circuits each including a diode-connected transistor and a capacitor. At least one transistor is provided with a back gate, and the back gate is connected to any node in the charge pump circuit. For example, in the case that the charge pump circuit is of a step-up type and the transistor is of an n-channel type, a back gate of the transistor in the last stage is connected to an output node of the charge pump circuit. Back gates of the transistors in the other stages are connected to an input node of the charge pump circuit. Accordingly, the voltage holding capability of the fundamental circuit in the last stage may be improved, and the conversion efficiency may be increased because an increase in the threshold voltage of the transistors in the other stages is prevented. |
