发明名称 |
MULTILAYER STRUCTURE, DEVICE USING SAME, AND MANUFACTURING METHOD THEREFOR |
摘要 |
Provided are a novel multilayer structure that can be used to protect a device and a device using the multilayer structure. The disclosed multilayer structure is a multilayer structure including a substrate and a barrier layer stacked on the substrate. The 3% strain tension of the substrate in at least one direction is at least 2000 N/m. The barrier layer contains a reaction product (R). The reaction product (R) is a reaction product formed by a reaction at least between a metal oxide (A) and a phosphorus compound (B). In an infrared absorption spectrum of the barrier layer in a range of 800 to 1400 cm -1 , a wavenumber (n 1 ) at which maximum infrared absorption occurs is in a range of 1080 to 1130 cm -1 . A metal atom constituting the metal oxide (A) is essentially an aluminum atom. |
申请公布号 |
KR20150022001(A) |
申请公布日期 |
2015.03.03 |
申请号 |
KR20157000872 |
申请日期 |
2013.06.12 |
申请人 |
KURARAY CO., LTD. |
发明人 |
NAKAYA MASAKAZU;HIGASHIDA NOBORU;YOSHIDA KENTARO;SASAKI RYOICHI;SHIBATA MANABU;OSHITA TATSUYA |
分类号 |
H01L31/049;B32B9/00;H01L31/0256 |
主分类号 |
H01L31/049 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|