Method of producing a semiconductor device having an interconnect through the substrate

摘要

A semiconductor substrate (1) is provided on a main surface (14) with an intermetal dielectric (4) including metal planes (5) and on an opposite rear surface (15) with an insulation layer (2) and an electrically conductive connection pad (7). An etch stop layer (6) is applied on the intermetal dielectric to prevent a removal of the intermetal dielectric above the metal planes during subsequent method steps. An opening (9) having a side wall (3) and a bottom (13) is formed from the main surface through the substrate above the connection pad. A side wall spacer (10) is formed on the side wall by a production and subsequent partial removal of a dielectric layer (11). The insulation layer is removed from the bottom to uncover an area of the connection pad. A metal layer is applied in the opening and is provided for an interconnect through the substrate.

主权项

1. A method of producing a semiconductor device, comprising:
providing a semiconductor substrate having a main surface and a rear surface opposite the main surface; providing the main surface with an intermetal dielectric and metal planes embedded in the intermetal dielectric and providing the rear surface with an insulation layer and an electrically conductive connection pad arranged in the insulation layer; applying an etch stop layer on the intermetal dielectric; forming an opening having a side wall and a bottom from the main surface through the substrate above the connection pad; applying a dielectric layer in the opening; forming a side wall spacer on the side wall by partially removing the dielectric layer and removing the insulation layer from the bottom, thus uncovering an area of the connection pad, the etch stop layer preventing a removal of the intermetal dielectric above the metal planes; and applying a metal layer in the opening, thus forming an interconnect through the substrate, wherein the etch stop layer is a polyimide.