Methods of fabricating semiconductor devices

摘要

Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a multi-layer of dielectric layers on a semiconductor substrate, the multi-layer of dielectric layers including at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer; and after forming the multi-layer of dielectric layers, forming an upper electrode layer on the multi-layer of dielectric layers, wherein the multi-layer of dielectric layers is crystallized at a temperature at which the upper electrode layer is formed.