| 发明名称 | Integrated circuit system employing resistance altering techniques | ||
| 摘要 | An integrated circuit system that includes: providing a substrate including a first region and a second region; forming a first device over the first region and a resistance device over the second region; forming a first dielectric layer and a second dielectric layer over the substrate; removing a portion of the second dielectric layer; and annealing the integrated circuit system to remove dopant from the resistance device. | ||
| 申请公布号 | US8969151(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US200812040761 | 申请日期 | 2008.02.29 |
| 申请人 | GLOBALFOUNDRIES Singapore Pte. Ltd. | 发明人 | Tan Shyue Seng;Teo Lee Wee;Tan Chung Foong;Lee Jae Gon;Quek Elgin Kiok Boone |
| 分类号 | H01L21/8234;H01L21/8244;H01L27/06;H01L21/8238;H01L29/78;H01L21/00 | 主分类号 | H01L21/8234 |
| 代理机构 | Ishimaru & Associates LLP | 代理人 | Ishimaru & Associates LLP |
| 主权项 | 1. A method of manufacture of an integrated circuit system comprising: providing a substrate including a first region and a second region; forming a first device over the first region, the first device having a first gate over a first gate dielectric; forming a resistance device over the second region, the resistance device having a second gate over a second gate dielectric similar to the first gate and the first gate dielectric of the first device; forming a first dielectric layer and a second dielectric layer over the substrate wherein forming the second dielectric layer includes increasing the density of the second dielectric layer to increase a resistance value of the resistance device; removing a portion of the second dielectric layer; and annealing the integrated circuit system to remove dopant from the resistance device. | ||
| 地址 | Singapore SG | ||