发明名称 |
Field-line repeater (FLR) structure of a sense array |
摘要 |
Apparatuses and methods of field-line repeater structures for sense arrays are described. One apparatus includes a substrate, a capacitive-sense array with electrodes disposed on one or more sides of the substrate in one or more layers and a protective cover layer disposed to cover the capacitive-sense array. A coating film is disposed over the protective cover layer and a field-line repeater (FLR) structure of floating electrodes is disposed between the coating film and the protective cover layer. |
申请公布号 |
US8970796(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201314015720 |
申请日期 |
2013.08.30 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Hoshtanar Oleksandr |
分类号 |
G02F1/1335;G06F3/044;G06F3/041 |
主分类号 |
G02F1/1335 |
代理机构 |
Lowenstein Sandler LLP |
代理人 |
Lowenstein Sandler LLP |
主权项 |
1. A touch-sensing device comprising:
a capacitive-sense array comprising a plurality of electrodes disposed in a first layer; a second layer of material to cover the capacitive-sense array; a third layer of material disposed over the second layer; and a field-line repeater structure comprising a plurality of floating electrodes disposed between the second layer and the third layer, wherein the plurality of electrodes are diamond-shape electrodes and arranged in a plurality of rows and a plurality of columns, wherein the plurality of floating electrodes comprises a first set of floating electrodes arranged in a diamond shape and disposed to overlap portions of at least two of the diamond-shape electrodes in a first row of the plurality of rows and to overlap portions of at least two of the diamond-shape electrodes in a first column of the plurality of columns. |
地址 |
San Jose CA US |