发明名称 Field-line repeater (FLR) structure of a sense array
摘要 Apparatuses and methods of field-line repeater structures for sense arrays are described. One apparatus includes a substrate, a capacitive-sense array with electrodes disposed on one or more sides of the substrate in one or more layers and a protective cover layer disposed to cover the capacitive-sense array. A coating film is disposed over the protective cover layer and a field-line repeater (FLR) structure of floating electrodes is disposed between the coating film and the protective cover layer.
申请公布号 US8970796(B2) 申请公布日期 2015.03.03
申请号 US201314015720 申请日期 2013.08.30
申请人 Cypress Semiconductor Corporation 发明人 Hoshtanar Oleksandr
分类号 G02F1/1335;G06F3/044;G06F3/041 主分类号 G02F1/1335
代理机构 Lowenstein Sandler LLP 代理人 Lowenstein Sandler LLP
主权项 1. A touch-sensing device comprising: a capacitive-sense array comprising a plurality of electrodes disposed in a first layer; a second layer of material to cover the capacitive-sense array; a third layer of material disposed over the second layer; and a field-line repeater structure comprising a plurality of floating electrodes disposed between the second layer and the third layer, wherein the plurality of electrodes are diamond-shape electrodes and arranged in a plurality of rows and a plurality of columns, wherein the plurality of floating electrodes comprises a first set of floating electrodes arranged in a diamond shape and disposed to overlap portions of at least two of the diamond-shape electrodes in a first row of the plurality of rows and to overlap portions of at least two of the diamond-shape electrodes in a first column of the plurality of columns.
地址 San Jose CA US