Semiconductor device

摘要

The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10−5 Ω·m or more and 4.8×10−3 Ω·m or less.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film including a first region, a second region, and a channel formation region between the first region and the second region; a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film; a gate electrode layer overlapping with the channel formation region; and a gate insulating film between the oxide semiconductor film and the gate electrode layer, wherein the first region and the second region include a dopant at a concentration greater than or equal to 1.3×1019 cm−3 and less than or equal to 1.6×1020 cm−3, wherein resistivity of the first region and the second region is greater than or equal to 1.9×10−5 Ω·m and less than or equal to 4.8×10−3 Ω·m, and wherein channel length is greater than or equal to 5 nm and less than 60 nm.