发明名称 |
Light-emitting layer and light-emitting element |
摘要 |
To provide a highly efficient organic light-emitting element. An extremely thin layer (a monomolecular film or the like) containing an organic light-emitting material such as an iridium complex is provided between a layer of an n-type organic material (an organic material having a high electron-transport property) and a layer of a p-type organic material (an organic material having a high hole-transport property). In a structure described above, in a layer of the organic light-emitting material, electrons are injected from the LUMO of the n-type organic material to the LUMO of the organic light-emitting material, and holes are injected from the HOMO of the p-type organic material to the HOMO of the organic light-emitting material, whereby the organic light-emitting material is brought into an excited state and emits light. |
申请公布号 |
US8969854(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201213405384 |
申请日期 |
2012.02.27 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Takemura Yasuhiko;Yamazaki Shunpei |
分类号 |
H01L29/08;H01L35/24;H01L51/00;B82Y20/00;H01L51/50 |
主分类号 |
H01L29/08 |
代理机构 |
Robinson Intellectual Property Law Office, P.C. |
代理人 |
Robinson Eric J.;Robinson Intellectual Property Law Office, P.C. |
主权项 |
1. An organic light-emitting layer comprising:
a layer of an n-type organic material; a layer of a p-type organic material; and a monomolecular film consisting of an organic metal complex containing iridium, wherein the monomolecular film is interposed between the layer of the n-type organic material and the layer of the p-type organic material, wherein the difference between the lowest unoccupied molecular orbit level of the n-type organic material and the lowest unoccupied molecular orbit level of the organic light-emitting material is less than 0.5 eV, and wherein the difference between the highest occupied molecular orbit level of the p-type organic material and the highest occupied molecular orbit level of the organic light-emitting material is less than 0.5 eV. |
地址 |
Atsugi-shi, Kanagawa-ken JP |