| 发明名称 | Imprint lithography | ||
| 摘要 | An imprint lithography template is provided with an alignment mark, wherein the alignment mark is formed from dielectric material having a refractive index which differs from the refractive index of the imprint lithography template, the dielectric material having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material. | ||
| 申请公布号 | US8968630(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201012912586 | 申请日期 | 2010.10.26 |
| 申请人 | ASML Netherlands B.V. | 发明人 | Kruijt-Stegeman Yvonne Wendela;Den Boef Arie Jeffrey;Jeunink Andre Bernardus |
| 分类号 | B29C59/02;G03F7/00;B82Y10/00;B82Y40/00;G03F9/00 | 主分类号 | B29C59/02 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A method of imprint comprising: directing alignment radiation towards an alignment mark formed from dielectric material provided on an imprint template, the dielectric material having a different refractive index from the imprint template and having a thickness which is such that it provides a phase difference between alignment radiation which has passed through the dielectric material and alignment radiation which has not passed through the dielectric material; detecting alignment radiation reflected from the imprint template alignment mark and from a substrate alignment mark; aligning the substrate and the imprint template; and directing actinic radiation through the imprint template and through the dielectric material towards the substrate. | ||
| 地址 | Veldhoven NL | ||