| 发明名称 | Nanowire devices | ||
| 摘要 | A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device. | ||
| 申请公布号 | US8969179(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201113885258 | 申请日期 | 2011.11.02 |
| 申请人 | International Business Machines Corporation | 发明人 | Gotsmann Bernd W;Karg Siegfried F.;Riel Heike E. |
| 分类号 | H01L21/20;H01L21/02;H01L29/06;H01L29/10;H01L29/423;H01L29/66;H01L29/775;H01L29/786;B82Y10/00;B82Y40/00 | 主分类号 | H01L21/20 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A method for forming a nanowire device, comprising: forming a semiconductor nanowire between a first support and a second support; forming a stressor layer circumferentially surrounding the semiconductor nanowire, wherein, due to the stressor layer, the nanowire is subjected to radial strain; and freeing the nanowire from at least one of the first support and the second support so as to further subject the nanowire to longitudinal strain to enhance carrier mobility in the nanowire. | ||
| 地址 | Armonk NY US | ||