| 发明名称 |
Method for forming isolation structure |
| 摘要 |
[Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress.;[Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more. |
| 申请公布号 |
US8969172(B2) |
申请公布日期 |
2015.03.03 |
| 申请号 |
US201113881560 |
申请日期 |
2011.11.02 |
| 申请人 |
AZ Electronic Materials USA Corp. |
发明人 |
Nakamoto Naoko;Suzuki Katsuchika;Sugahara Shinji;Nagahara Tatsuro |
| 分类号 |
H01L21/76;H01L21/762;H01L21/02;H01L29/06;H01L21/3105 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
Jain Sangya |
| 主权项 |
1. A method for forming an isolation structure, comprising
a coating step, in which a first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat; a first firing step, in which said coat is fired to form a porous siliceous film having a refractive index of 1.35 or less; an impregnating step, in which said porous siliceous film is impregnated with a second polysilazane composition; and a second firing step, in which said porous siliceous film is fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more; wherein at least one of the first and second firing steps is carried out in an inert gas or oxygen atmosphere containing water vapor. |
| 地址 |
Somerville NJ US |
