SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using a three-dimensional channel, and to provide a method of manufacturing the semiconductor device.SOLUTION: A semiconductor device has: a first fin F1, a second fin F2, and a third fin F5 which are parallel to one another in a length direction; a first trench 502 having a first depth formed between the first fin and the second fin; a first field insulating film 112 formed in the first trench; a second trench 503 which is formed between the first fin and the third fin and has a second depth deeper than the first depth; and a second field insulating film 113 formed in the second trench. The height of an upper surface of the first field insulating film is greater than or equal to the height of an upper surface of the first fin.