SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a method of manufacturing the same capable of reducing an on-resistance.SOLUTION: A silicon carbide semiconductor substrate 10 having a first principal surface 10a and a second principal surface 10b is prepared. A first electrode 16 contacted with the first principal surface 10a of the silicon carbide semiconductor substrate 10 and having ohmic junction to the silicon carbide semiconductor substrate 10 is formed. At least a part at the second principal surface 10b side, of the silicon carbide semiconductor substrate 10 is removed. A second electrode 20 is formed which is contacted with the second principal surface 10b of the silicon carbide semiconductor substrate 10 exposed by removing at least a part of the silicon carbide semiconductor substrate 10, and has ohmic junction with the silicon carbide semiconductor substrate 10. A metal layer 22 electrically contacted with a fourth principal surface 20b of the second electrode 20 is formed. A thickness of the metal layer 22 is larger than that of the silicon carbide semiconductor substrate 10 after the at least a part of the silicon carbide semiconductor substrate 10 is removed.