| 摘要 |
PROBLEM TO BE SOLVED: To provide improvement in designability or controllability in a composition where internal quantum efficiency has a strong negative correlation with a crystal defect density and an optical semiconductor device as a light source extracts an optical output for the purpose of increasing luminescent efficiency to extract a high optical output when the optical semiconductor device is used as the light source.SOLUTION: An optical semiconductor device in which a p-type electrode including a p-type semiconductor and an n-type electrode including an n-type semiconductor are provided on a substrate comprises a structure in which a buffer layer for reducing crystal fault is formed between an operation layer and the substrate, and forms a light emitting part by limiting a region area of the light emitting part when a crystal defect density in the light emitting area exceeds the minimum value thereby to enable internal quantum efficiency to be increased to sufficiently extract a high optical output. |
