发明名称 SINGLE CRYSTAL PRODUCTION DEVICE AND SINGLE CRYSTAL PRODUCTION METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a single crystal production device capable of obtaining a high-quality long single crystal, and a single crystal production method using the same.SOLUTION: A single crystal production device according to the present invention comprises: a crucible 1 for housing a raw material 2 of a single crystal; a crucible lid 3 covering an upper face of the crucible 1 and having an opening at a center; a pedestal 5 provided in the crucible 1 with a back face exposed from the opening of the crucible lid 3, and fixing a seed crystal 4s; a guide 6 provided on an inner wall of the crucible 1 to cover a crystal growth region, and guiding raw material gas formed by sublimating the raw material 2 to the seed crystal 4s; and an upper lid 8 annularly provided on the crucible lid 3 except for the opening of the crucible lid 3, and forming a chamber between it and the crucible lid 3. A through hole 7 communicated with the chamber is provided on the crucible lid 3 around the pedestal 5.
申请公布号 JP2015040146(A) 申请公布日期 2015.03.02
申请号 JP20130171824 申请日期 2013.08.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOSHO TOMOAKI
分类号 C30B29/36;C30B23/06 主分类号 C30B29/36
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