| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing the bowing of a shape obtained by etching a silicon oxide film.SOLUTION: A method for etching a silicon oxide film includes a step of exposing a workpiece to plasma of process gas to etch a silicon oxide film OX, the workpiece having the silicon oxide film and a mask provided on the silicon oxide film. The mask includes a first film L1 provided on the silicon oxide film OX and a second film L2 provided on the first film. The second film comprises a film that has an etching rate lower than the etching rate of the first film, to an active species in the plasma. |
