发明名称 DISPLAY SUBSTRATE HAVING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 <p>Disclosed are a display substrate and a method of manufacturing the same. The display substrate includes a gate electrode, an active pattern, an insulating pattern, a source electrode, a drain electrode, and a first passivation layer. The gate electrode is arranged on a base substrate. The active pattern is overlapped with the gate electrode and includes an oxide semiconductor. The insulating pattern is arranged on the active pattern. The source electrode is in contact with the active pattern. The drain electrode is in contact with the active pattern and is separated from the source electrode. The first passivation layer is arranged on the insulating pattern and the active pattern and includes fluorine. The active pattern includes a first part which is in contact with the insulating pattern and is overlapped with the gate electrode, a second part which is in contact with the first passivation layer and has a higher electric conductivity compared to the first part, and a third part which is in contact with the first passivation layer, has a higher electric conductivity compared to the first part, and is separated from the second part.</p>
申请公布号 KR20150021242(A) 申请公布日期 2015.03.02
申请号 KR20130098337 申请日期 2013.08.20
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 LEE, JE HUN;YANG, SUNG HOON;OKUMURA HIROSHI;HWANG, JIN HO
分类号 G09F9/00;G09F9/30 主分类号 G09F9/00
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