| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of achieving high efficiency, high emission luminance and a high optical output, which provides on a surface of a substrate capable of transmitting visible rays or ultraviolet rays, a p-type electrode including a p-type semiconductor and an n-type electrode including an n-type semiconductor thereby to improve luminous efficiency/emission luminance and improve external quantum efficiency at the same time.SOLUTION: An optical semiconductor device which provides on a surface of a substrate capable of transmitting visible rays or ultraviolet rays, a p-type electrode including a p-type semiconductor and an n-type electrode including an n-type semiconductor and extracts an emitted optical output comprises a structure in which a lens surface capable of condensing light is formed on a rear face side of the substrate in a monolithic manner. |
