| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in a field effect transistor in which a gate electrode for inputting electric signal, is provided between a source electrode and a drain electrode on a substrate, which improves designability or controllability of the semiconductor device caused by occurrence of crystal defects generated by lattice mismatching with the substrate and internal field generation generated by intrinsic polarization and piezo polarization to keep the current in an off operation state when no signal is input, and can establish high withstand voltage, a large current flow, stable operation and a high reliability on the operation of the device.SOLUTION: A semiconductor device has a heterojunction structure in which a first buffer layer for reducing crystal defects and a second buffer layer for reducing internal field generation are formed between an operation active layer and a substrate, and a carrier supply layer as the operation active layer/a channel layer/a single channel for reducing stress, or a plurality of channels of the single channel are formed.</p> |
