| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wafer processing method capable of achieving wafer thickness accuracy more than thickness variations of a protective tape.SOLUTION: A wafer processing method comprises a groove forming step, a protective tape sticking step, a flattening step, and a grinding step. The groove forming step includes forming a cutting groove S having a depth equivalent to a finishing thickness of a device chip by cutting a surface WS of a wafer W along a division schedule line. The protective tape sticking step includes sticking an adhesive layer Ta side of a protective tape T composed of a base material layer Tb and the adhesive layer Ta to the surface WS of the wafer W. The flattening step includes holding the wafer W on a holding surface 22 of a chuck table 21 of a cutting tool device 20 and flattening the protective tape T by cutting a surface of a base material layer Tb of the protective tape T with a cutting tool 24. The grinding step includes dividing the wafer W into individual device chips by thinning a rear surface WR of the wafer W by grinding.</p> |
