| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon single crystal material to be used as a sputtering target material having no slip and less deviation from a target resistivity or an electrode for plasma etching.SOLUTION: A manufacturing method of a silicon single crystal material pulls upward a silicon single crystal having a resistivity of 10 to 50 &OHgr;cm by a Czochralski method, cuts the silicon single crystal into pieces of a thickness of 5 to 50 mm, and controls the resistivity within the range of ±10% of a target resistivity without donor killer heat treatment. Preferably, the concentration of interstitial oxygen in the silicon single crystal to be pulled upward is set to be a low oxygen concentration of 6.6 to 10×1017 atoms/cm3 (ASTM'79) in order that the deviation from the target resistivity is certainly controlled within the range of ±10%. Preferably, a site is cut which is located upward from the bottom edge of a silicon single crystal trunk by 20% of the length ratio of the trunk. |
