改善金氧半导体层之导电性的方法;METHOD FOR IMPROVING THE ELECTRICAL CONDUCTIVITY OF METAL OXIDE SEMICONDUCTOR LAYERS

摘要

本揭示内容提供一种在预设位置处改善金氧半导体层的导电性的方法。该方法包括：在一基板上提供一金氧半导体层；藉由原子层沉积在该金氧半导体层的顶端提供一金氧层，其中，该金氧层在该些预设位置处物理性接触该金氧半导体层。惊人的发现是，此方法会导致该金氧半导体层在该些预设位置处有高导电性。本揭示内容的方法能够有利地使用在自我对齐顶端闸极金氧半导体薄膜电晶体的制作过程中，用以改善源极区与汲极区中的导电性。; providing by means of Atomic Layer Deposition a metal oxide layer on top of the metal oxide semiconductor layer, wherein the metal oxide layer is in physical contact with the metal oxide semiconductor layer at the predetermined locations. It was surprisingly found that this method results in an increased electrical conductivity of the metal oxide semiconductor layer at the predetermined locations. The method of the present disclosure can advantageously be used in a fabrication process for self-aligned top-gate metal oxide semiconductor thin film transistors, for improving the electrical conductivity in the source and drain regions.