| 摘要 |
本发明提供一种半导体结构与具有该半导体结构之半导体元件。该半导体结构包含：一基板；一第一井区，具有第一导电型，设置于该基板上；以及复数缓和区，设置于该第一井区中，于一横向上靠近该第一井区之一边界，且该缓和区由剖视图视之，于一纵向上贯通该第一井区；其中，该第一井区与一第二井区在该横向上，相邻于该边界，该第二井区具有与该第一导电型相反之第二导电型；其中，该缓和区之导电型为第一导电型或相反导电型态之第二导电型。; a first well with a first conductive type, which is disposed on the substrate; and plural mitigation regions with the first conductive type or a second conductive type opposite to the first conductive type, which are disposed in the first well closed to a boundary of the first well in a lateral direction, and penetrate the first well in a vertical direction from a cross-section view; wherein a second well with the second conductive type is connected to the first well at the boundary in the lateral direction. |
