发明名称 感测器及其制造方法;SENSOR AND METHOD OF MANUFACTURING THE SAME
摘要 本揭露提供一种感测器,包括:第一基板,包括导电接点结构,导电接点结构自第一基板之面向外凸出且电性耦合至第一基板上之感压微机电结构;第二基板,包括具有导电表面之接收结构,接收结构自第二基板之第一面沿着界定导电表面之复数个侧壁凹陷,其中导电表面电性耦合至第二基板上之互补式金氧半导体装置;及导电接合材料,将导电接点结构物理性黏附至导电表面,且将微机电结构电性耦合至互补式金氧半导体装置。本揭露亦提供此感测器之制造方法。; a second substrate including: a receiving structure having a conductive surface which is recessed from a first face of the second substrate by sidewalls that bound the conductive surface, wherein the conductive surface is electrically coupled to a complementary metal oxide semiconductor (CMOS) device on the second substrate; and a conductive bonding material to physically adhere the conductive contact structure to the conductive surface and to electrically couple the MEMS structure to the CMOS device. The present disclosure also provides a method for manufacturing the sensor.
申请公布号 TW201508930 申请公布日期 2015.03.01
申请号 TW103123576 申请日期 2014.07.09
申请人 台湾积体电路制造股份有限公司 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 郑钧文 CHENG, CHUN WEN;梁凯智 LIANG, KAI CHIH;朱家骅 CHU, CHIA HUA
分类号 H01L29/84(2006.01) 主分类号 H01L29/84(2006.01)
代理机构 代理人 洪澄文颜锦顺
主权项
地址 新竹市新竹科学工业园区力行六路8号 TW
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