| 摘要 |
The present invention relates to a method for manufacturing Si-SiO_x core-shell nanowire using a chemical vapor deposition (CVD) method. More particularly, the present invention relates to a method for manufacturing Si-SiO_x core-shell nanowire using a CVD method, the method including the steps of: disposing Si-SiO_x powder and a raw substrate in a heating part of a tube furnace; heating the heating part under inert atmosphere and maintaining the raised temperature; and depositing the Si-SiO_x powder on a surface of the substrate by heating the heating part to allow the temperature of the substrate to be adjusted to about 700 to 1000°C. According to the present invention, Si-SiO_x powder is simply deposited on the substrate by a CVD method without use of any catalyst, so that a Si-SiO_x core-shell nanowire of about 30 nm or less may be synthesized. Since the nanowire thus synthesized is strongly anchored to the substrate without a binder or a conductor, a charge/discharge speed of a battery can be improved, and consequently the nanowire may be helpfully used as a material of an anode of a lithium-ion battery. |
