| 摘要 |
Disclosed are a method for forming conductive structures and conductive structures. The method for forming the conductive structures comprises steps of: forming an opening in a dielectric layer on a substrate; performing a cleaning process on the dielectric layer having the opening; forming a nucleation layer in the opening; etching the nucleation layer in the opening; and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate to the substrate. After the etching, an upper portion of the nucleation layer in the upper portion of the opening has a thickness less than that of a lower portion of the nucleation layer in the lower portion of the opening. |
