| 摘要 |
<p>A non-volatile memory device includes a memory cell array, multiple ADCs, and a path selecting part. The memory cell array includes multiple sub arrays. The ADCs sense a sensing voltage outputted from a memory cell of the sub arrays. The path selecting part connects the sub arrays with the ADCs one to one in a first operating mode and connects each of the ADCs with a power voltage terminal. The subject of the present invention is to use an analog-to-digital converter used for reading multilevel data in various purposes.</p> |
