摘要 |
The present disclosure relates to a silicon thin film which can be used for a semiconductor or a solar cell, a method of manufacturing the same, and an electronic device including the same. According to the present invention, provided is the method of manufacturing a silicon thin film, which includes the steps of: spreading a silicon oxide over a substrate before sintering to obtain a silicon oxide film; and electrochemically reducing the silicon oxide film to form a porous film before sintering again. Therefore, the silicon thin film used for a semiconductor, a solar cell, a secondary battery and the like can be easily prepared at low costs with the smaller number of processes than the related art, so the price competitiveness of a product can be improved. |