发明名称 Electrochemical Preparation Method of Silicon Film
摘要 The present disclosure relates to a silicon thin film which can be used for a semiconductor or a solar cell, a method of manufacturing the same, and an electronic device including the same. According to the present invention, provided is the method of manufacturing a silicon thin film, which includes the steps of: spreading a silicon oxide over a substrate before sintering to obtain a silicon oxide film; and electrochemically reducing the silicon oxide film to form a porous film before sintering again. Therefore, the silicon thin film used for a semiconductor, a solar cell, a secondary battery and the like can be easily prepared at low costs with the smaller number of processes than the related art, so the price competitiveness of a product can be improved.
申请公布号 KR20150020990(A) 申请公布日期 2015.02.27
申请号 KR20140092967 申请日期 2014.07.23
申请人 发明人
分类号 H01L31/046;H01L31/18 主分类号 H01L31/046
代理机构 代理人
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